国家/地区 中国（4）
IPC部 C（4） B（3） H（3）
IPC大类 C23（4） H01（3） C01（2）
IPC小类 C23C（4） C01B（2） H01L（2）
IPC C23C016/02（4）
发明人
公开年 2023（4）
申请年 2022（4）
专利权人

Preparing secondary enhanced graphene gas gel useful in shoes, comprises introducing substrate layer on prepared graphene gas gel surface, performing chemical vapor deposition reaction and growing sheet layer or spherical graphene aggregate on surface of substrate layer.

ZHENG L, SHEN Y, ZHENG Y, WU L, WANG H

Preparing gallium nitride nanowire/graphene composite material useful in sterilizing device, comprises providing substrate, forming layer of gold film on positive and negative surfaces of substrate, growing gallium nitride nanowire on substrate covered with gold film, and depositing graphene film.

LI J, FU Y, DAI Y, LIN C, WANG Z, LIN L, YANG Y, HU Y, XU Z, FU Z

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C