国家/地区 韩国（3）
IPC部 B（3）
IPC大类 B01（3） C01（3） C23（3）
H01（2）
IPC小类 B01J（3）
IPC C01B031/04（3）
发明人
公开年 2016（2）
申请年 2015（3）
专利权人

Graphene forming apparatus has gas supply unit which is placed in side of laser generator for spraying sealed gas on amorphous carbon layer.

KI H S, LEE K H

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Manufacture of graphene involves irradiating near-infrared ray to chamber containing metallic catalyst and carbon source, reacting metallic catalyst and carbon source, and growing graphene on surface of metallic catalyst.

HONG B H, HAN J H, HAN D H, CHOI W T, KIM J D