国家/地区 中国（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4） B22F（2） C04B（2）
IPC C23C016/26（4）
发明人 ZHANG F（4）
公开年
申请年
专利权人

Preparing graphene-reinforced copper-based complex material comprises sintering raw materials by hot pressing or spark plasma (SPS) to convert amorphous carbon film into graphene microcrystals.

YANG Y, ZHANG F, XIA L, LI F

Method of growing graphene on silicon substrate by using silicon carbide substrate chip, putting into graphite crucible, adding carbon or silicon, covering, heating, carrying out hydrogen corrosion, and forming silicon carbide structure.

CHEN X, XU X, ZHAG F, ZHAO X, ZHANG F

Coating graphene coated material utilizing resistive material, metal powder, flame retardant and resistance sintering agent.

KONG R, GENG B, ZHANG F

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F