国家/地区 中国（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3）
IPC C23C016/26（3）
发明人 WANG C（3）
公开年 2016（2）
申请年 2015（3）
专利权人 SHANGHAI ADV.（2）

Method for preparing nitrogen-doped graphene film, involves introducing gas carbon source under condition of high temperature so as to form nitrogen-doped graphene film by carbon deposition.

FANG X, CAI W, WANG C, CHEN X, YANG L

Preparation of graphene thin film, involves providing copper foil, electrochemically etching surface of copper foil, and growing graphene thin film by chemical vapor deposition on surface of copper foil.

CAI W, FANG X, CHEN X, WANG C

Preparation of graphene film on titanium or titanium alloy surface used as implant material, involves growing graphene film on metal base material, covering with plastic film, placing in dissolution medium, and attaching to titanium.

BI L, HAN Y, LI K, WANG C, ZHANG Z, YAN J, DIWU W