国家/地区 日本（3）
IPC部 C（3）
IPC大类 C01（3） C23（3） H01（3）
IPC小类 C01B（3） C23C（3） H01L（2）
IPC C23C016/26（3）
发明人
公开年 2017（2）
申请年 2017（3）
专利权人

Wiring for semiconductor device, includes first metal portion, multilayer graphene, and second metal portion which are interposed between conductive portions.

KATAGIRI M, SAITO T, SAKAI T, MIYAZAKI H

Manufacture of nitrogen-doped graphene film used as conductive film, involves forming nitrogen-doped graphene film on base by irradiating base with plasma containing hydrocarbon, nitrogen, and oxygen having preset partial pressure.

OKIGAWA YUKI, YAMADA TAKATOSHI, ISHIHARA MASATOU, HASEGAWA MASATAKA

Method for manufacturing steel sheet or steel strip for battery case, involves providing nickel-plated steel sheet or strip and applying graphene based coating layer on nickel-plated steel sheet or strip.

SHIVAREDDY S, BOHM S, PATOLE S, THAKUR D B, VAN DER WEIJDE D H, BOEHM S