国家/地区 中国（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4）
IPC C23C016/26（4）
发明人 DU C（4）
公开年 2015（4）
申请年 2014（2）  2015（2） 
专利权人 CHINESE ACAD.（4） CHONGQING MO.（4）

Graphene growing device used for producing graphene thin film comprises cavity body, upper annular mounting grooves, and high temperature-resistant carbon-carbon material cylinder.

DU C, LI Z, SHI H, ZHONG D, YU B

Graphene growing chamber used for graphene thin film comprises cavity body, annular mounting groove and carbon-carbon refractory material cylinder.

DU C, LI Z, SHI H, ZHONG D, YU B

Atmospheric pressure chemical vapor deposition of graphene to form graphene film, involves cleaning copper foil substrate, annealing, forming graphene crystal domains on substrate, nucleating, melting to form graphene film, and cooling.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

Preparing a graphene film through low-temperature fixed-point nucleating comprises e.g. coating layer of carbon source solution on metal substrate, drying, patterning on metal substrate, graphene nucleating, diffusing and cooling.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D