国家/地区 中国（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3） H01L（2）
IPC C23C016/26（3）
发明人 HAN D（3）
公开年 2013（3）
申请年 2012（3）
专利权人 UNIV XIDIAN（3）

Method for laser-assisted lossless transfer of chemical vapor deposition graphene, involves growing gallium nitride and copper layers on sapphire substrate in sequence, depositing graphene on copper layer in chemical vapor deposition mode.

HAO Y, NING J, HAN D, YAN Y, WANG D, ZHANG J, CHAI Z

Annealing sapphire substrate used for transfer of graphene, by introducing hydrogen, argon and methane gases into copper foil, soaking in ferric pernitrate and acetone, and rinsing with ethanol and deionized water, passing into argon gas.

WANG D, CHAI Z, NING J, ZHANG J, HAN D, HAO Y, YAN Y

Direct epitaxial method of graphene by chemical vapor deposition using II-VI semiconductor zinc oxide substrate where graphene-zinc oxide composite is used for piezoelectric device comprises pre-processing substrate and growing graphene.

ZHANG J, HAN D, NING J, HAO Y, CHAI Z, WANG D, YAN Y