国家/地区 日本（3）
IPC部 B（3）
IPC大类 B32（3） C01（3） C23（3）
H01（3） B82（2）
IPC小类 B32B（3）
IPC B32B009/00（3）
发明人
公开年 2013（2）
申请年 2013（3）
专利权人

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Preparing graphene for photovoltaic cells involves annealing catalyst substrate in hydrogen gas within chemical vapor deposition chamber at atmospheric pressure and exposing it to gas mixture of hydrocarbon/hydrogen having specific pressure.

VLASSIOUK I V, SMIRNOV S N, PETER W H, SABAU A S, DAI S, FULVIO P F, IVANOV I N, LAVRIK N V, DATSKOS P G