国家/地区
IPC部 C（2）
IPC大类 C01（2） C23（2）
IPC小类 C01B（2）
IPC C23C016/26（2）
发明人 WANG J（2）
公开年 2022（2）
申请年 2021（2） 
专利权人

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Method for improving graphene performance by wet soaking and low-temperature annealing, involves removing poly methyl methacrylate photo-resist remaining on graphene during transfer process by annealing in low-pressure and low-temperature atmosphere.

LI M, ZHENG S, WANG J