国家/地区 美国（2）
IPC部 C（2） H（2）
IPC大类 C23（2） H01（2）
IPC小类 C23C（2） H01L（2）
IPC C23C016/26（2）
发明人
公开年 2023（2）
申请年 2021（2）
专利权人

Method for processing semiconductor, involves material layer formed on portion of liner and metal-containing layer, where layer of material comprises graphene and portion of material layer on liner is removed.

MALLICK A B, SINGHA R S, GHOSH S, ROY S S

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S