国家/地区 韩国（2）
IPC部 C（2） H（2）
IPC大类 C23（2）
IPC小类 C23C（2） H01L（2）
IPC C23C016/26（2）
发明人 AN S（2）
公开年 2023（2）
申请年 2022（2） 
专利权人 SAMSUNG ELEC.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Substrate processing apparatus for manufacturing semiconductor device, comprises substrate support to support multiple substrates such that substrates are on substrate support, chamber sidewall surrounding side surface of substrate support, and upper plate having plate portions on substrate support.

OH S, AN S, LEE J, JEONG G, JUNG K O, LEE J H, AHN S J, OH S R