国家/地区 美国（4） 世界知识产权组织（4） 中国（3） 欧洲专利局（EPO）（3） 韩国（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C23C016/448（5）
发明人
公开年
申请年
专利权人

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Formation of graphene layer on metal layer used in sensing applications, involves heating process chamber, introducing carbon including deposition gas into chamber and transporting precursors into metal layer.

GILLES OLLIVIER BORME J, LUIS MACHADO J, PEDRO DOS SANTOS HALL DE AGORR, BARBOSA QUEIROS R, JORGE PEIXEIRO DE FREITAS P

Preparing deposited graphene used as genosensor, comprises heating metal substrate and carbon source in sealed ambient environment, maintaining temperature and time sufficient to form graphene lattice and then cooling substrate.

SEO D H, PINEDA S, HAN Z J, OSTRIKOV K

Coating surfaces of different substrates with covalently-bonded graphenes comprises thermal expansion and floating of graphene, graphene oxide or graphite materials in the presence of silicon- or cyano-containing polymers.

LEE L J, HUANG W, YU J, LEE L

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K