国家/地区
IPC部 C（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC C23C016/02（2）
发明人
公开年 2023（2）
申请年 2021（2）
专利权人

Depositing gate dielectric on two-dimensional material involves depositing seed layer over atomically smooth surface of two dimensional material, evaporating predefined thickness of seed layer from atomically smooth surface, and performing atomic layer deposition.

SHRIVASTAVA M, KHANEJA M, MEERSHA A

Depositing high-quality aluminum oxide thin films on surface of graphene comprises cleaning graphene substrate and adding into atomic layer deposition chamber, passing water molecules into atomic layer deposition chamber for pretreatment, obtaining required film and cooling.

LI N, LU W, LIU T, ZHANG Y, FAN T, XIA Y, WU S, TANG C, QU F