国家/地区 美国（4）
IPC部 C（4） B（3） H（3）
IPC大类 C23（4）
IPC小类 C23C（4） C01B（3） C25D（3）
H01L（2）
IPC C23C016/455（4）
发明人 LIPOMI D J（2） ZARETSKI A（2）
公开年
申请年
专利权人 UNIV CALIFOR.（2）

Producing octahedral transition metal dichalcogenides involves forming transition metal layer on substrate and injecting chalcogenide-containing gas onto the substrate together with plasma treatment.

VINIT K, KIM H U, LEE J, SEOK H, KIM T, KIM T S, SEOK H H, WOO K H, CANADEVINIT

Manufacturing method of graphene layer on substrate, involves exfoliating metalized graphene layer from first substrate and laminating metalized graphene layer to second substrate.

ZARETSKI A, LIPOMI D J

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Method for manufacturing electrical conductor, involves depositing boundary cappings on defects of graphene layer to inhibit corrosion of the substrate layer at defects and depositing boundary capping material on substrate layer.

LIU Z, ZHENG M, MARTENS R I, MARTENS R