国家/地区 韩国（3） 中国（2） 美国（2）
IPC部 C（4）
IPC大类 C23（4） C01（3）
IPC小类 C23C（4） C01B（3）
IPC C23C016/46（4）
发明人 WON D K（2）
公开年 2012（3）
申请年 2011（4）
专利权人 HANWHA TECHW.（2） SAMSUNG TECH.（2）

Graphene manufacturing device has heating portion anneals processed substrate in which amorphous carbon is deposited.

GWAN W D, YEONG K N, WON D K, KIM N Y

Fabricating a three dimensional graphene structure e.g. carbon nanotube, comprises growing graphene on metal catalyst template in certain form, and removing template by dissolving template on which graphene has grown, in etching solvent.

YOO J, PATOLE S P, LEE H, YOO J B, SHASHIKANT P P

Graphene manufacturing apparatus, comprises gas supplying unit for supplying gas, gas heating unit for heating gas, deposition chamber in which substrate is disposed and inlet pipe for supplying the gas into deposition chamber.

WON D, CHO S, WON D K, YUAN D

Preparation of graphene material involves plating nickel membrane on substrate, adjusting optical path and parameter of laser, introducing argon gas and hydrogen gas, opening the laser, and introducing methane as reaction precursor source.

FANG F, WANG X, CUI Y, WANG F, LI J, WEI Z, FANG X, LUO T