国家/地区 中国（3） 世界知识产权组织（2）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3） C01B（2）
IPC C23C016/26（3）
发明人 SHEN H（2） SUN L（2） WU T（2）
公开年 2012（3）
申请年 2012（2） 
专利权人

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Method for growing graphene through chemical vapor phase deposition, involves using poly-benzene ring aromatic hydrocarbons as carbon source and using carbon source decomposition method or spin-coating method of carbon source.

DING G, JIANG M, SHEN H, SUN L, TANG S, WU T, XIE X

Synthesizing large area graphene with controllable number of layers by low-temperature chemical vapor deposition of polystyrene, useful in anti-radiation electronic devices, comprises taking substrate, heating polystyrene, growing graphene.

SUN L, WU T, SHEN H