国家/地区 中国（6） 台湾（2）
IPC部 C（8）
IPC大类 C23（8）
IPC小类 C23F（8） C23C（3） C25D（3）
F16B（2）
IPC C23F015/00（8）
发明人 CHEN Y（2） HUANG Y（2） SHEN D（2）
ZHANG B（2）
公开年 2020（3） 2021（2）
申请年 2019（3）  2021（2） 
专利权人 CONTINENTAL .（2） UNIV BINZHOU（2）

Fastener comprises body, interposer coated on body and comprising silicone, and adhesive copolymerized with organic resin, and outer coating layer comprising metal powder particles, nano-zinc particles, and graphene particles.

SHEN D, HUANG Y, ZHANG B, ZIYIN C

Preparation method of nitrogen-doped graphene metal material used in metal corrosion protection involves placing raw materials, providing containing cavity and growth cavity, and placing metal growth substrate in growth cavity.

WU Q, MA Y

Fastener comprises body, and outer coating layer applied to body and including metal powder particles, nano-zinc particles, and graphene particles uniformly dispersed.

LIU H, SHEN D, LIU M, HUANG Y, ZHANG B

Preparing graphene-based superhydrophobic B30 copper-nickel alloy involves polishing B30 copper-nickel alloy with sandpaper to remove impurities and oxides on the surface, using absolute ethanol and ultrasonic cleaning.

LIU Y, CHEN Y

Preparing graphene-based superhydrophobic magnesium alloy comprises polishing magnesium alloy, ultrasonically cleaning using isopropanol and acetone, drying using nitrogen and performing electro-deposition using electrolyte composition.

CHEN Y

In-situ preparing copper-based fluorinated graphene corrosion-resistant film involves e.g. taking copper substrate in reaction chamber, introducing carbon source-, hydrogen- and fluorine gases and in-situ fluorination etching treatment.

ZHAO W, WU Y, WANG L, LIU C, FANG Z, XUE Q

Method for preventing corrosion of graphene-protected metal by crystal plane involves growing graphene on metal foil of specific crystal surface to protect metal foil from corrosion.

XU X, YU D, WANG E, LIU K

Method for manufacturing electrical conductor, involves depositing boundary cappings on defects of graphene layer to inhibit corrosion of the substrate layer at defects and depositing boundary capping material on substrate layer.

LIU Z, ZHENG M, MARTENS R I, MARTENS R