国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B025/02（3）
发明人
公开年 2013（3）
申请年 2012（2） 
专利权人

Preparation of single crystal graphene involves adhering graphene to silicon/silicon dioxide composite layer and then transferring to substrate, providing substrate into reaction chamber and supplying carbon source gas and reducing gas.

LIN S, LI X

Modulation-doped single-crystal graphene pn junction prepared by putting copper foil into reactor, introducing mixed gas and inert gas into the reactor, passing mixed gas into copper foil, and cooling, useful in logic device.

WU D, YAN K, LIU Z, PENG H

Gallium nitride-based substrate, epitaxial graphene direct chemical vapor deposition growth comprises using III-V group compound semiconductor gallium nitride as substrate, pre-processing, and directly growing graphene.

CHAI Z, ZHANG J, HAN D, HAO Y, YAN Y, NING J, WANG D