国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2） H01（2）
IPC小类 C30B（2） H01L（2）
IPC C30B025/16（2）
发明人
公开年 2023（2）
申请年 2022（2） 
专利权人

Preparing three-dimensional homogeneous epitaxial structure used in preparation of optoelectronic device or electronic device, involves covering two-dimensional material layer on surface of nitride single crystal substrate, and processing one micro nano-scale blind hole on surface of material layer.

YAN Q, WANG G

Preparation of wafer-level self-supporting cadmium-tellurium thin film used in electronic device, involves cleaning two-dimensional material/sapphire substrate, assembling two-dimensional material/sapphire substrate and support by molten metal material, and growing cadmium telluride thin film.

WANG J, WANG X, TANG X, CAO H, BAI W