国家/地区 美国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人 RUOFF R S（2）
公开年 2015（2）
申请年
专利权人 UNIV TEXAS S.（2）

Forming graphene single crystal domain on substrate, comprises contacting substrate with passivating gas to create low nucleation site density substrate, and contacting the resultant with working gas at first elevated temperature.

COLOMBO L, RUOFF R S, HAO Y

Making graphene film comprises configuring metal substrate to form interior surface of substrate in fluid communication with gaseous environment, loading into chemical vapor deposition apparatus, heating and providing hydrogen and carbon.

RUOFF R S, CHEN S