国家/地区 中国（2） 日本（2）
IPC部 C（4）
IPC大类 H01（4） C01（2） C07（2）
IPC小类 H01L（4） C01B（2） C07C（2）
C07D（2）
IPC H01L051/05（4）
发明人 CHANG X（2） GUO X（2） JIA C（2）
LI P（2）
公开年 2022（4）
申请年 2021（4） 
专利权人 BEIJING WEIM.（2） UNIV NANKAI（2）

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

New diamine compound with quantum interference effect, used in preparation of single-molecule field effect transistor.

CHANG X, WANG B, JIA C, LI P, GUO X

New plane conjugated molecular compound used in single-molecule field-effect transistor comprising graphene gate electrode layer, bismuth selenite dielectric bottom layer, and hexagonal boron nitride dielectric top layer.

CHANG X, JIA C, ZHANG M, LI P, GUO X

Semiconductor device, such as ffield effect transistors (FET), comprises gate electrode arranged on graphene film between source electrode and drain electrode with gate insulator film interposed between gate electrode and graphene film.

MITSUHASHI F, TATENO Y