国家/地区 韩国（4） 美国（4）
IPC部 B（4）
IPC大类 C01（4） B01（2） B82（2）
H01（2）
IPC小类 C01B（4） B01J（2） B82Y（2）
IPC C01B031/04（4）
发明人
公开年 2017（3）
申请年 2016（2） 
专利权人 KOREA ADVANCED SCI TECHNOLOGY INST（4）

Manufacturing graphene used in field effect transistor, supercapacitor, hydrogen generation or storage, solar cell, photocatalyst and biosensor, comprises forming the graphene by unzipping doped carbon materials by an external stimulus.

KIM S O, LEE H J, LIM J, KIM S

Porous nanostructure used for e.g. hydrogen storage material and vibration absorber, comprises graphene layer comprising laminated graphene and having pores formed on surface or inside, and metal particles embedded in graphene filler.

JUNG J, KIM H, OH I, OH J, JUNG J H, KIM H J, OH J H

Graphene-nanomaterial complex includes nanomaterials which are disposed between graphenes that are not disposed on same plane to form three-dimensional graphene structure, in which graphenes, nanomaterials or both form electrical network.

HONG S H, JUN G H, OH J Y, RYU H J, GWANG H J, HO J R, JAE Y O, SOON H H

Fabrication of graphene quantum dots used in e.g. electronic product, involves heating mixture of graphite powders with metallic hydrate salt to form intercalation compound by inserting metal ions, and redispersing in solvent.

JEON S, KIM B, SONG S, JEON S W, KIM B H, SONG S H