国家/地区 日本（3）
IPC部 B（3）
IPC大类 B01（3） H01（3） C01（2）
C23（2）
IPC小类 B01J（3）
IPC B01J019/08（3）
发明人
公开年 2013（3）
申请年 2012（2） 
专利权人

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Metal powder for use as inner electrode of multilayered ceramic capacitor, comprises graphene layer, which is irregularly formed on surface of metal powder.

KIM W C, LIM H H, WI S K, LEE K S, WOON C K, HYUN H L, SUNG K W, IVY L