国家/地区 美国（7） 韩国（6） 欧洲专利局（EPO）（3） 中国（2） 日本（2） 世界知识产权组织（2）
IPC部 B（8）
IPC大类 B32（8）
IPC小类 B32B（8）
IPC C23C016/26（8）
发明人 AHN J（2） AHN J H（2） HONG B H（2）
公开年 2012（5） 2011（2）
申请年 2011（8）
专利权人 UNIV SUNGKYU.（2）

Stable graphene film for graphene transparent electrode for touch screen, comprises graphene film and conductive protective film.

AHN J H, HONG B H, YAN C, AHN J

Formation of graphene wiring involves alternately laminating metal catalytic layer and graphene layer on substrate.

JUNG J W, LEE W J

Manufacture of transparent graphene film for device e.g. display, involves forming graphene oxide thin film on substrate, performing chemical reduction, and carrying out secondary thermal reduction and nitrogen doping.

KIM S O, HWANG J O, LEE D H

Graphene structure for producing three-dimensional shape of e.g. electronic circuit, comprises template having three-dimensional shape and rod shape, graphene to cover portion of outer circumference of template, and supporting layers.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Fabricating structure comprising graphene sheet equipped with metal pads, comprises synthesizing graphene sheet on many metal pads that are laid on membrane of dielectric material, and optionally eliminating the membrane.

ZENASNI A, CORAUX J, IVANOVAHRISTOVA V, LANDIS S, PERNEL C

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Manufacturing graphene sheet used as electrode material, involves growing graphene sheet on graphene growth support by applying carbon sources and heat; and forming ripple on the sheet by cooling the graphene growth support and sheet.

AHN J, HONG B, KIM K, AHN J H, HONG B H, KIM K S