国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人 ZHANG C（2）
公开年 2013（2）
申请年 2012（2）
专利权人

Preparation of silicon-substrate patterned graphene involves passing argon gas-carrying carbon tetrachloride to quartz tube with to-be-patterned film, depositing nickel film on obtained carbon film, annealing and removing nickel film.

LEI T, GUO H, ZHANG Y, ZHANG K, ZHANG C, ZHAO Y

Assembling and synthesizing graphene, comprises introducing transition metal into high temperature section of furnace, allowing substrate material in low temperature region and then vacuumizing and introducing hydrogen gas into furnace.

ZHANG C, MAN B, YANG C