国家/地区 中国（3）
IPC部 B（3）
IPC大类 B01（3） C01（3） B82（2）
H01（2）
IPC小类 B01J（3）
IPC C01B031/04（3）
发明人 KIM H（3）
公开年
申请年
专利权人

Method for forming multilayer graphene for e.g. stackable device, involves forming multilayer graphene on area of graphene at temperature by using source gas, where source gas used to form graphene is different from source gas.

HYOWON K, KIM H, KIM H W, JIN X

Manufacture of secondary battery cathode material involves preparing silicon colloidal solution using waste silicon sludge suspension, preparing mixture of silicon agglomerates, graphene oxide and dispersion medium, and heat-treating.

JANG H D, CHANG H, KIM H, ZHANG X, JIN H

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I