国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/186（2）
发明人 SUN H（2）
公开年 2021（2）
申请年 2021（2）
专利权人 SUN H（2）

Reaction chamber for scale preparation device of chemical vapor deposition (CVD) deposited graphene, has discharge bur line that is connected with cathode, and is provided with three air inlets respectively carbon-derived gas inlet.

SUN H

Scale preparation device of chemical vapor deposition (CVD) deposited graphene comprises outlet end of main chamber connected to inlet end of secondary chamber, bottom of preparation chamber sunken downwards to form liquid airtight tank.

SUN H