国家/地区 美国（3）
IPC部 B（3）
IPC大类 C01（3） C23（3） B82（2）
C30（2）
IPC小类 C01B（3）
IPC C23C016/26（3）
发明人 DING G（3）
公开年 2012（2）
申请年
专利权人 SHANGHAI INS.（3） CHINESE ACAD.（2）

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X