国家/地区 英国（3）
IPC部 C（3）
IPC大类 C01（3） C23（3）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人
公开年 2016（2）
申请年 2015（3）
专利权人

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

Low temperature plasma-based process for preparing substrate coated with graphene-containing thin film, involves plasma-depositing film onto substrate via vapor deposition process, and subjecting layered substrate to laser treatment.

CAFFIO M, MARQUORDT C, ARVIDSEN J H, HAUPT R A B

Apparatus for plasma synthesis of graphitic products including graphene, passes cracked carbon-containing species into reaction chamber, and recombining cracked carbon-containing species within afterglow.

PENNINGTON D A, CLAYTON A R, JUDA K L, PAUKNER C, KURZEPA L, COOPER R H S J, KOZIOL K K, JOAUG J Y, ST JOHN COOPER R H, ST JOHN C R H