国家/地区 世界知识产权组织（4）
IPC部 C（4）
IPC大类 C01（4） C23（4） H01（4）
B82（3） B32（2）
IPC小类 C01B（4）
IPC C23C016/26（4）
发明人
公开年 2012（3）
申请年 2011（4）
专利权人

Formation of graphene for graphene structure for transparent electrode, involves forming amorphous carbon layer on substrate, forming graphitizing catalyst layer, heating, crystallizing amorphous carbon layer and forming graphene layer.

KIM K B, LEE H H, KIM H M, CHO S Y

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U