国家/地区 韩国（2） 美国（2） 世界知识产权组织（2）
IPC部 B（2）
IPC大类 B32（2）
IPC小类 B32B（2）
IPC B32B005/00（2）
发明人 MILLER S（2）
公开年 2013（2）
申请年
专利权人 EMPIRE TECHN.（2）

Partially altering defect area in a layer on substrate involves reacting substrate under reaction conditions to produce cationic area in exposed areas; adhering graphene oxide to cationic area to produce graphene oxide layer; and reducing.

MILLER S, YAGER T, MILLER S A, YAGER T A

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A