国家/地区 台湾（2）
IPC部 B（2）
IPC大类 B32（2）
IPC小类 B32B（2） B82B（2） B82Y（2）
C23C（2）
IPC B32B005/00（2）
发明人
公开年
申请年
专利权人

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Nanosheet used in applications e.g. superconductors, capacitors comprises silicon carbide layer having first and second surfaces; a first graphene layer formed of specific graphenes; and a second graphene layer formed of specific graphenes.

CHEN K, HU M, KUO C, CHEN L, CHEN K H, HU M S, KUO C C, CHEN L C