国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C23C016/26（4） C01B032/186（3） C23C016/54（2）
发明人 PENG H（4）
公开年 2019（2） 2021（2）
申请年 2019（2） 
专利权人 BEIJING GRAP.（4） UNIV PEKING（4）

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Graphene composite metal foil double-side growth device has chemical vapor deposition furnace comprising plasma glow region and heating growth region, and connected with unwinding shaft and winding shaft on both sides.

PENG H, CAO F, YANG H, WANG K, WANG X, LIU Z

Graphene film roll-to-roll production device comprises a vacuum cavity, a vacuum pump assembly and a filling assembly, where the process gas further comprises one monitoring component, and a parameter control assembly.

PENG H, YANG Q, DONG G, ZHA B, LIU Z

Cleaning method of graphene comprises rolling the surface of graphene through curved body provided with adsorbent on curved surface.

LIU Z, PENG H, SUN L, LI Y, LIU X, LIN L, ZHANG J, JIA K