国家/地区 韩国（2）
IPC部 B（2）
IPC大类 B01（2）
IPC小类 B01J（2）
IPC B01J019/08（2）
发明人 LEE K（2）
公开年 2012（2）
申请年 2011（2） 
专利权人 KOREA ADV IN.（2）

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H