国家/地区 韩国（3） 美国（2）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/02（3）
发明人 WON D K（2）
公开年 2012（3）
申请年 2011（3）
专利权人 HANWHA TECHW.（2） SAMSUNG TECH.（2）

Graphene manufacturing device has heating portion anneals processed substrate in which amorphous carbon is deposited.

GWAN W D, YEONG K N, WON D K, KIM N Y

Fabricating a three dimensional graphene structure e.g. carbon nanotube, comprises growing graphene on metal catalyst template in certain form, and removing template by dissolving template on which graphene has grown, in etching solvent.

YOO J, PATOLE S P, LEE H, YOO J B, SHASHIKANT P P

Graphene manufacturing apparatus, comprises gas supplying unit for supplying gas, gas heating unit for heating gas, deposition chamber in which substrate is disposed and inlet pipe for supplying the gas into deposition chamber.

WON D, CHO S, WON D K, YUAN D