国家/地区 英国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/182（2）
发明人
公开年
申请年
专利权人

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S