国家/地区
IPC部 C（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC C30B025/00（2）
发明人 WU T（2）
公开年
申请年
专利权人 SHANGHAI INS.（2）

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M