国家/地区 美国（3）
IPC部 B（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/186（3） C23C016/26（3） B82Y040/00（2）
C01B032/182（2） C30B029/02（2）
发明人 WANG H（3）
公开年
申请年
专利权人 SHANGHAI INS.（3）

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X