国家/地区 韩国（2）
IPC部 B（2）
IPC大类 B01（2）
IPC小类 B01J（2）
IPC C23C016/56（2）
发明人
公开年 2021（2）
申请年 2020（2） 
专利权人

Manufacturing transition metal dichalcogenide-graphene heterojunction electrode comprises transferring graphene to electrode, depositing transition metal layer on graphene-transferred electrode and injecting plasma-treated sulfur gas.

KIM T S, SEOK H H, LEE I, WOO K H

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F