国家/地区 日本（3） 美国（2） 世界知识产权组织（2）
IPC部 B（3）
IPC大类 B32（3） C01（3） C23（2）
IPC小类 B32B（3）
IPC C01B032/15（3）
发明人
公开年 2015（2）
申请年 2014（3）
专利权人

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Manufacture of graphene film used for e.g. next-generation transistor, involves transferring graphene film with supporting film to graphene film on another substrate, and transferring laminated graphene films to another substrate.

HAYASHI K