国家/地区 日本（3） 中国（2） 美国（2）
IPC部 B（3）
IPC大类 B82（3） C01（3） H01（2）
IPC小类 B82B（3）
IPC B82B003/00（3）
发明人
公开年 2009（2）
申请年 2008（3）
专利权人

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T

Method for processing graphene sheet type-material used for semiconductor integrated circuit device, involves irradiating vacuum UV rays to surface of graphene sheet-type material to remove or modify outermost surface layer of material.

ASANO T

Preparation of graphene or graphene dispersion used for manufacturing paper, film, composite and articles for nanoelectronics, nanocomposites and batteries, involves reducing purified exfoliated graphite oxide in presence of base.

LI D, WALLACE G G