国家/地区 韩国（2） 美国（2）
IPC部 C（2）
IPC大类 C01（2） C23（2） H01（2）
IPC小类 C01B（2）
IPC C01B032/186（2）
发明人 LEE C（2）
公开年 2023（2）
申请年
专利权人 SAMSUNG ELEC.（2）

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S