国家/地区 韩国（3）
IPC部 B（3）
IPC大类 B01（3） C01（3）
IPC小类 B01J（3）
IPC B01J019/10（3）
发明人
公开年 2013（3）
申请年 2012（2） 
专利权人

Manufacture of graphene oxide reduced material for forming electrode for silicon-based semiconductor, involves synthesizing graphite oxide flakes from graphite flakes and forming graphene oxide dispersion solution.

JEONG S, LEE G, HAN J, JEONG H, KIM S, HAN J T, JEONG H J, JEONG S Y, KIM S H, LEE G W

Manufacture of high-purity graphene fuel cell, battery and super capacitor, involves irradiating light in solution containing graphene oxide having anion, reducing graphene oxide using optical catalyst, and separating optical catalyst.

LEE J S, JANG J, SEONG L J, UK J J, SUNG L J, JIWOOK J

Manufacture of graphene film or pattern involves printing individually graphene oxide ink and reducing agent ink on substrate, reacting, and forming graphene film or pattern.

CHOI K C, KIM K J, AHN S I