国家/地区 欧洲专利局（EPO）（2） 美国（2）
IPC部 B（2）
IPC大类 B82（2）
IPC小类 B82Y（2）
IPC B82Y010/00（2）
发明人
公开年
申请年 2014（2）
专利权人

Graphene double-barrier resonant tunneling apparatus, has second contact which applies second voltage to fermion sink nanolayer, and transport contact which enables electric current through fermion transport nanolayer.

ASTLEY M R, ASTLEY M

Graphene device has insulating layer which is provided between graphene layer and gate electrode, and semiconductor substrate is provided with tunable Schottky barrier formed by junction of source electrode, graphene layer and substrate.

CHUNG H, SEO D, PARK S, BYUN K, SONG H, YANG H, HEO J, CHUNG H J, PARK S J, BYUN K E, SONG H J, YANG H J, HEO J S