国家/地区 美国（2）
IPC部 B（2）
IPC大类 B32（2）
IPC小类 B32B（2）
IPC B82B001/00（2）
发明人
公开年 2011（2）
申请年 2011（2） 
专利权人

Graphene composition, useful in electrical device, preferably e.g. sensor, bipolar junction transistor, field effect transistor and light emitting diode, comprises a graphene monolayer and an alkali metal disposed on the graphene monolayer.

SHIN H, CHOI J, AHN J, JEON C, AHN J R, CHOI J Y, JEON C H, SHIN H J

Graphene nanomesh for forming transistor, sensor, and graphene structure, comprises sheet of graphene having periodically arranged apertures, where the apertures have a substantially uniform periodicity and substantially uniform neck width.

DUAN X, HUANG Y, BAI J