国家/地区
IPC部 B（2）
IPC大类 B82（2）
IPC小类 B82Y（2）
IPC B82Y010/00（2）
发明人
公开年 2017（2）
申请年
专利权人

Performing chemical modification of graphene used in preparation of graphene devices, by performing photochemical modification of graphene and substrate using pulsed laser patterning, and subjecting to atomic layer selective deposition.

LU W, XIA Y, CHENG S, ZHANG Q, WANG H, LI N

Heterojunction graphene nanoribbon for resonant tunneling diode comprises substrate, and first, second, and third graphene nanoribbon elements.

YAMAGUCHI J