国家/地区 韩国（3） 美国（3）
IPC部 B（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/184（3）
发明人 KIM H（3）
公开年
申请年
专利权人

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Method for forming multilayer graphene for e.g. stackable device, involves forming multilayer graphene on area of graphene at temperature by using source gas, where source gas used to form graphene is different from source gas.

HYOWON K, KIM H, KIM H W, JIN X

Manufacturing graphene used as anode material in lithium secondary battery, by forming graphite oxide from graphite, subjecting graphite oxide to hydrochloric acid treatment, and subjecting treated graphite oxide to heat treatment.

KANG K, KIM H, KANG K S, KIM H G