国家/地区 中国（6）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/184（6）
发明人 LIU Y（6）
公开年 2023（6）
申请年 2021（2）  2022（2）  2023（2） 
专利权人 PETROCHINA C.（2） UNIV CHINA P.（2）

Preparing germanium embedded graphene layer-based three-dimensional carbon network composite material useful in preparing lithium-ion battery cathode, comprises e.g. preparing pluronic F-127 solution, adding germanium(IV) oxide, graphene oxide and carbon nanotubes, sonicating, and carbonizing.

LIU Y, ZHENG X, GUO X, GU H, ZHANG J

Device for preparing graphene, has driven gear provided with connecting rod, where outer wall of connecting rod is circumferentially provided with multiple stirring paddles, and top part of device main body is provided with feeding port.

LI Y, ZHANG S, SHANG J, GAO C, LIU Y

Method for preparing pore-rich thin layer graphene, involves pre-treatment of oil raw material using catalytic oil slurry or residual oil through delayed coking treatment to obtain coking liquid product as pre-processing raw material oil.

ZHANG R, XU Q, BI Q, WANG X, LIU Y, WANG L, WU M, HE S, ZHAO Q, ZHANG H

Method for preparing graphene material by using catalytic oil slurry as raw material in cross field of petrochemical industry and carbon nano material science, involves mixing thermal polycondensation oil with extractant for extraction separation, where extractant in lower layer liquid is steamed.

YU Z, XU Q, BI Q, WANG X, LIU Y, ZHAO Q, WANG L, WU M, ZHANG H, HE S

Preparing graphene, involves mixing lignin with water, reacting with preset amount of nitric acid, dispersing formed black solid phase in water, hydro-thermally treating liquid,at preset condition, removing liquid phase, subjecting obtained water-soluble graphene to dialysis treatment and drying.

LIU Y, YU Q, LI G, MA Q, WANG J, CHEN X, WU F, ZHOU P, LI H, PENG W

Preparing high-single-crystal pure single-layer graphene nanoribbon array used for band gap generation of graphene, involves covering surface of substrate with high single-crystal pure single-layer graphene, performing near-field electrospinning direct writing on surface of high-single-crystal.

ZHAN D, GUO W, LIU Y