国家/地区
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人
公开年 2016（2）
申请年 2015（2） 
专利权人

Production of graphene used in manufacture of semiconductor devices, involves providing substrate of silicon carbide, applying polymer layer and/or sorbate onto substrate, and applying polymer layer and/or sorbate onto heated substrate.

KRUSKOPF M, PIERZ, PIERZ K

Scale-up of chemical vapor deposition growth of large area graphene involves repeating forming carbon source layers on growth substrate, growing graphene in chemical vapor deposition system and separating substrate from carbon source.

CHENG H, MA L, REN W