国家/地区 韩国（2） 美国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人
公开年
申请年
专利权人

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Forming graphene, useful as e.g. electrical or thermal conductive substrate, comprises placing and heating a substrate within reaction chamber, introducing carbon precursor into chamber, and forming graphene layer on surface of substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z